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CY7C199D-10VXI IC SRAM 256KBIT PARALLEL 28SOJ Infineon Technologies

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CY7C199D-10VXI IC SRAM 256KBIT PARALLEL 28SOJ Infineon Technologies

Name: CY7C199D10VXI IC SRAM 256KBIT PARALLEL 28SOJ Infineon Technologies
Brand: Infineon Technologies
Price: 1 USD

Brand Name : Infineon Technologies

Model Number : CY7C199D-10VXI

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Asynchronous

Memory Size : 256Kbit

Memory Organization : 32K x 8

Memory Interface : Parallel

Clock Frequency : -

Write Cycle Time - Word, Page : 10ns

Access Time : 10 ns

Voltage - Supply : 4.5V ~ 5.5V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 28-BSOJ (0.300", 7.62mm Width)

Supplier Device Package : 28-SOJ

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Product Details

Functional Description [1]

The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits.

Features

• Pin- and function-compatible with CY7C199C
• High speed
— tAA = 10 ns
• Low active power
— ICC = 80 mA @ 10 ns
• Low CMOS standby power
— ISB2 = 3 mA
• 2.0V Data Retention
• Automatic power-down when deselected
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
• Available in Pb-free 28-pin 300-Mil wide Molded SOJ and
28-pin TSOP I packages

Specifications

Attribute	Attribute Value
Manufacturer	Cypress Semiconductor
Product Category	Memory ICs
Series	CY7C199D
Type	Asynchronous
Packaging	Tube Alternate Packaging
Mounting-Style	SMD/SMT
Package-Case	28-BSOJ (.300", 7.62mm Width)
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	4.5 V ~ 5.5 V
Supplier-Device-Package	28-SOJ
Memory Capacity	256K (32K x 8)
Memory-Type	SRAM - Asynchronous
Speed	10ns
Data-Rate	SDR
Access-Time	10 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 85 C
Operating temperature range	- 40 C
Interface-Type	Parallel
Organization	32 k x 8
Supply-Current-Max	80 mA
Supply-Voltage-Max	5.5 V
Supply-Voltage-Min	4.5 V
Package-Case	SOJ-28
Mfr	Cypress Semiconductor Corp
Series	-
Package	Tube
Product-Status	Active
Memory-Type	Volatile
Memory-Format	SRAM
Technology	SRAM - Asynchronous
Memory-Size	256Kb (32K x 8)
Memory-Interface	Parallel
Write-Cycle-Time-Word-Page	10ns
Voltage-Supply	4．5V ~ 5．5V
Mounting-Type	Surface Mount
Package-Case	28-BSOJ (0．300" 7．62mm Width)
Base-Product-Number	CY7C199

Functional compatible component

Form,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
IS61C256AL-10JL Memory	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28	Integrated Silicon Solution Inc	CY7C199D-10VXI vs IS61C256AL-10JL
IS61C256AL-10TL Memory	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, LEAD FREE, PLASTIC, TSOP1-28	Integrated Silicon Solution Inc	CY7C199D-10VXI vs IS61C256AL-10TL
CY7C199D-10ZXI Memory	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, TSOP1-28	Cypress Semiconductor	CY7C199D-10VXI vs CY7C199D-10ZXI
AS7C256A-10TCN Memory	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, LEAD FREE, TSOP1-28	Alliance Memory Inc	CY7C199D-10VXI vs AS7C256A-10TCN
CY7C199-10ZI Memory	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28	Cypress Semiconductor	CY7C199D-10VXI vs CY7C199-10ZI
CY7C199-10ZC Memory	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28	Rochester Electronics LLC	CY7C199D-10VXI vs CY7C199-10ZC
CY7C199-10VI Memory	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Cypress Semiconductor	CY7C199D-10VXI vs CY7C199-10VI
CY7C199-10VC Memory	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Rochester Electronics LLC	CY7C199D-10VXI vs CY7C199-10VC
CY7C199D-10VXIT Memory	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28	Cypress Semiconductor	CY7C199D-10VXI vs CY7C199D-10VXIT
PDM41256LA10TTY Memory	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, PLASTIC, TSOP1-28	IXYS Corporation	CY7C199D-10VXI vs PDM41256LA10TTY

Descriptions

SRAM Chip Async Single 5V 256K-bit 32K x 8 10ns 28-Pin SOJ Tube

SRAM 256Kb 10ns 32K x 8 SRAM

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