Home > Flash Memory IC >

IS43R16160F-6TLI IC DRAM 256MBIT PAR 66TSOP II ISSI, Integrated Silicon Solution Inc

Product Categories

Sanhuang electronics (Hong Kong) Co., Limited

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

IS43R16160F-6TLI IC DRAM 256MBIT PAR 66TSOP II ISSI, Integrated Silicon Solution Inc

Name: IS43R16160F6TLI IC DRAM 256MBIT PAR 66TSOP II ISSI Integrated Silicon Solution Inc
Brand: ISSI, Integrated Silicon Solution Inc
Price: 1 USD

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS43R16160F-6TLI

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM - DDR

Memory Size : 256Mbit

Memory Organization : 16M x 16

Memory Interface : Parallel

Clock Frequency : 166 MHz

Write Cycle Time - Word, Page : 15ns

Access Time : 700 ps

Voltage - Supply : 2.3V ~ 2.7V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 66-TSSOP (0.400", 10.16mm Width)

Supplier Device Package : 66-TSOP II

Contact Now

Product Details

FEATURES

● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
● High speed data transfer rates with system
frequency up to 933 MHz
● 8 internal banks for concurrent operation
● 8n-bit pre-fetch architecture
● Programmable CAS Latency
● Programmable Additive Latency: 0, CL-1,CL-2
● Programmable CAS WRITE latency (CWL) based on tCK
● Programmable Burst Length: 4 and 8
● Programmable Burst Sequence: Sequential or Interleave
● BL switch on the fly
● Auto Self Refresh(ASR)
● Self Refresh Temperature(SRT)
● Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
● Partial Array Self Refresh
● Asynchronous RESET pin
● TDQS (Termination Data Strobe) supported (x8 only)
● OCD (Off-Chip Driver Impedance Adjustment)
● Dynamic ODT (On-Die Termination)
● Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )
● Write Leveling
● Up to 200 MHz on DLL off mode
● Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Series	-
Packaging	Tray Alternate Packaging
Package-Case	66-TSSOP (0.400", 10.16mm Width)
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	2.3 V ~ 2.7 V
Supplier-Device-Package	66-TSOP II
Memory Capacity	256M (16M x 16)
Memory-Type	DDR SDRAM
Speed	166MHz
Format-Memory	RAM

Descriptions

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 166MHz 700ps 66-TSOP II

DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 66-Pin TSOP-II

DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz

Wholesale IS43R16160F-6TLI IC DRAM 256MBIT PAR 66TSOP II ISSI, Integrated Silicon Solution Inc from china suppliers

IS43R16160F-6TLI IC DRAM 256MBIT PAR 66TSOP II ISSI, Integrated Silicon Solution Inc Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Sanhuang electronics (Hong Kong) Co., Limited
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!